Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IR6210 | Intelligent high side mosfet power switch | International-Rectifier | - | 5 | - | - | 238 K |
IR6216 | Intelligent high side mosfet power switch | International-Rectifier | - | 5 | - | - | 237 K |
IRFR6215 | HEXFET power MOSFET. VDSS = -150V, RDS(on) = 0.295 Ohm, ID = -13A | International-Rectifier | - | 3 | -55°C | 150°C | 141 K |
IRFR6215 | HEXFET power MOSFET. VDSS = -150V, RDS(on) = 0.295 Ohm, ID = -13A | International-Rectifier | - | 3 | -55°C | 150°C | 141 K |
UNR6219 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
UNR621D | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
UNR621E | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
UNR621F | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
UNR621K | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
UNR621L | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 175 K |
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