| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T1008C2E-RB55 | 128Kx8 bit, 55ns low low power CMOS static RAM | Samsung-Electronic | TSOP | 32 | 0°C | 70°C | 190 K |
| RB500V-40 | Schottky barrier diode | ROHM | UMD2 | 2 | - | - | 56 K |
| RB501V-40 | Schottky barrier diode | ROHM | UMD2 | 2 | - | - | 57 K |
| RB551V-30 | Schottky barrier diode | ROHM | UMD2 | 2 | - | - | 57 K |
| ZRB500Y01 | Precision 5 V micropower voltage reference | Zetex-Semiconductor | - | 2 | -40°C | 85°C | 143 K |
| ZRB500Y01 | Precision 5 V micropower voltage reference | Zetex-Semiconductor | - | 2 | -40°C | 85°C | 143 K |
| ZRB500Y02 | Precision 5 V micropower voltage reference | Zetex-Semiconductor | - | 2 | -40°C | 85°C | 143 K |
| ZRB500Y02 | Precision 5 V micropower voltage reference | Zetex-Semiconductor | - | 2 | -40°C | 85°C | 143 K |
| ZRB500Y03 | Precision 5 V micropower voltage reference | Zetex-Semiconductor | - | 2 | -40°C | 85°C | 143 K |
| ZRB500Y03 | Precision 5 V micropower voltage reference | Zetex-Semiconductor | - | 2 | -40°C | 85°C | 143 K |
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