| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 195 K |
| IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 123 K |
| MRF10120 | 120 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 128 K |
| MRF10120 | Microwave long pulse power transistor | Motorola | - | 3 | - | - | 98 K |
| MRF10150 | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 139 K |
| MRF10150 | Microwave pulse power transistor | Motorola | - | 3 | - | - | 90 K |
| MRF1015MA | Microwave pulse power transistor | Motorola | - | 4 | - | - | 110 K |
| MRF1015MB | Microwave pulse power transistor | Motorola | - | 4 | - | - | 110 K |
| TRF1015DB | RECEIVER FRONT-END FOR 900 MHZ CELLULAR AND DIGITAL CORDLESS | Texas-Instruments | DB | 20 | - | - | 292 K |
| TRF1015IDB | RECEIVER FRONT-END FOR 900 MHZ CELLULAR AND DIGITAL CORDLESS | Texas-Instruments | DB | 20 | - | - | 292 K |
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