| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF1302 | Power MOSFET, 20V, 180A | International-Rectifier | - | 3 | -55°C | 175°C | 523 K |
| IRF1302L | Power MOSFET, 20V, 174A | International-Rectifier | - | 3 | -55°C | 175°C | 229 K |
| IRF1302S | Power MOSFET, 20V, 174A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 229 K |
| IRF1310N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | - | 3 | -55°C | 175°C | 96 K |
| IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 156 K |
| MRF137 | 30 W, N-channel MOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 213 K |
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