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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF150Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38AInternational-Rectifier-3-55°C150°C150 K
MRF154600 W, 50 V, N-channel broadband RF power MOSFETM-A-COM---manufacturer-of-RF-3--175 K
MRF157600 W, MOS linear RF power FETM-A-COM---manufacturer-of-RF-3--190 K
MRF158600 W, 50 V, TMOS broadband RF power FETM-A-COM---manufacturer-of-RF-4--493 K
SRF1535Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
SRF1535ASchottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
SRF1545Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 45 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
SRF1545ASchottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 45 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
SRF1550Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
SRF1560Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 60 V. Max average forward rectified current 15.0 A.distributor-3-65°C150°C181 K
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