Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF1607 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0075 Ohm, ID = 142A. | International-Rectifier | - | 3 | -55°C | 175°C | 234 K |
MRF160 | 4 W, 28 V, MOSFET broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 416 K |
MRF160 | Power field effect transistor | Motorola | - | 4 | - | - | 122 K |
MRF16006 | 6 W, 1.6 GHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 142 K |
MRF16030 | 30 W, 1.6 GHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 133 K |
MRF166 | RF power field effect transistor | Motorola | - | 4 | - | - | 154 K |
MRF166C | 20 W, 500 MHz, MOSFET broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 6 | - | - | 178 K |
MRF166C | RF power field effect transistor | Motorola | - | 6 | - | - | 111 K |
MRF166W | 40 W, 500 MHz, TMOS broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 5 | - | - | 206 K |
STPRF1660CT | 600V, 16.0A super fast glass passivated rectifier | distributor | - | 3 | -55°C | 150°C | 40 K |
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