| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1607 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0075 Ohm, ID = 142A. | International-Rectifier | - | 3 | -55°C | 175°C | 234 K |
| MRF160 | 4 W, 28 V, MOSFET broadband RF power FET | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 416 K |
| MRF160 | Power field effect transistor | Motorola | - | 4 | - | - | 122 K |
| MRF16006 | 6 W, 1.6 GHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 142 K |
| MRF16006 | NPN silicon | Motorola | - | 3 | - | - | 82 K |
| MRF16030 | 30 W, 1.6 GHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 133 K |
| MRF16030 | NPN silicon | Motorola | - | 3 | - | - | 108 K |
| STPRF1605CT | 50V; 16A super-fast glass passivated rectifier | distributor | - | 3 | -65°C | 150°C | 65 K |
| STPRF1605CT | 50V, 16.0A super fast glass passivated rectifier | distributor | - | 3 | -55°C | 150°C | 40 K |
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