| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARF445 | 300V, 300W, RF operation | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 64 K |
| ARF446 | 250V, 250W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 61 K |
| ARF447 | 250V, 250W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 61 K |
| ARF448A | 150V, 250W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 57 K |
| ARF448B | 150V, 250W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 57 K |
| ARF449A | 150V, 150W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 58 K |
| ARF449B | 150V, 150W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 58 K |
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 142 K |
| MRF448 | 250 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 135 K |
| MRF448 | 250 W, 30 MHz, RF power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 135 K |
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