Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF530 | Power MOSFET, 100V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 175 K |
IRF530 | 100 V, 14 A, power field effect transistor | distributor | TO | 3 | -55°C | 150°C | 481 K |
IRF5305 | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 175°C | 124 K |
IRF5305L | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 175°C | 171 K |
IRF5305S | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.06 Ohm, ID = -31A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 171 K |
IRF5305S | Power MOSFET, 55V, 31A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 171 K |
IRF530N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A | International-Rectifier | - | 3 | -55°C | 175°C | 212 K |
IRF530NL | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A | International-Rectifier | - | 3 | -55°C | 175°C | 178 K |
IRF530NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 178 K |
RN5RF53BC | Low ripple voltage regulator with external transistor. Output voltage 5.3V. Chip enable active type H. Antistatic bag | distributor | - | 5 | -40°C | 85°C | 134 K |
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