Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF634 | N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 333 K |
IRF634FP | N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 333 K |
IRF640 | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
IRF640L | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 228 K |
IRF640L | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | - | 3 | -55°C | 175°C | 228 K |
IRF640S | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 228 K |
IRF640STR | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 228 K |
IRF640STRL | N-channel power MOSFET for fast switching applications, 200V, 18A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 228 K |
IRF650B | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 898 K |
IRF654B | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 867 K |
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