Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IRF640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 61 K |
IRF640 | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 95 K |
IRF640 | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
IRF640FP | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
IRF640S | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT404 | - | - | - | 95 K |
IRF640S | N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
IRF646 | 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 60 K |
MRF641 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 103 K |
MRF6414 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 108 K |
MRF6414 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 108 K |
1 [2] [3] [4] [5] |
---|