| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARF648S25 | 2500 V, 2510 A, 30 kA fast recovery diode | distributor | - | 2 | -30°C | 150°C | 80 K |
| HB52RF649DC-75B | 256M; 133MHz unbuffered SDRAM SO-DIMM | distributor | TCP | 144 | 0°C | 65°C | 464 K |
| HB52RF649DC-75BL | 256M; 133MHz unbuffered SDRAM SO-DIMM | distributor | TCP | 144 | 0°C | 65°C | 464 K |
| HB52RF649DC-A6B | 256M; 100MHz unbuffered SDRAM SO-DIMM | distributor | TCP | 144 | 0°C | 65°C | 464 K |
| HB52RF649DC-A6BL | 256M; 100MHz unbuffered SDRAM SO-DIMM | distributor | TCP | 144 | 0°C | 65°C | 464 K |
| IRF644 | Power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 150°C | 173 K |
| IRF644N | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF644NL | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF644NL | N-channel power MOSFET, 250V, 14A | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF644NS | N-channel power MOSFET, 250V, 14A | International-Rectifier | D2PAK | 3 | -55°C | 175°C | 123 K |
| [1] [2] 3 [4] [5] |
|---|
