| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARF744S25 | 2500 V, 3725 A, 48 kA fast recovery diode | distributor | - | 2 | -30°C | 150°C | 44 K |
| IRF7467 | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12mOhm, ID = 11A | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
| IRF7468 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 15.5mOhm @ VGS = 10V, ID = 9.4A | International-Rectifier | SO | 8 | -55°C | 150°C | 232 K |
| IRF7469 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 17mOhm @ VGS = 10V, ID = 9.0A | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
| IRF7470 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10A | International-Rectifier | SO | 8 | -55°C | 150°C | 119 K |
| IRF7471 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10A | International-Rectifier | SO | 8 | -55°C | 150°C | 214 K |
| IRF7473 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 26mOhm @ VGS = 10V, ID = 6.9A | International-Rectifier | SO | 8 | -55°C | 150°C | 196 K |
| IRF7476 | Power MOSFET for high frequency applications, 12V, 15A | International-Rectifier | SO | 8 | -55°C | 150°C | 111 K |
| IRF7478 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V. | International-Rectifier | SO | 8 | -55°C | 150°C | 209 K |
| SRF745 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 45 V. Max average forward rectified current 7.5 A. | distributor | - | 2 | -65°C | 150°C | 178 K |
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