| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFM054 | 60V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 15 K |
| IRFM110A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 263 K |
| IRFM150 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 23 K |
| IRFM250 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 15 K |
| IRFM250D | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 24 K |
| IRFM260 | HEXFET transistor | International-Rectifier | - | 3 | -55°C | 150°C | 442 K |
| IRFM350 | 400V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 20 K |
| IRFM450 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 15 K |
| RFM10N45 | 10.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 31 K |
| RFM10N50 | 10.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 31 K |
| [1] [2] 3 [4] |
|---|
