| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP130 | N-channel MOSFET, 100V, 14A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP132 | N-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP132 | N-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP133 | N-channel MOSFET, 80V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 354 K |
| IRFP140A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 256 K |
| IRFP140N | 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET | Fairchild-Semiconductor | - | - | - | - | -- |
| IRFP150A | N-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 261 K |
| IRFP150N | 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET | Fairchild-Semiconductor | - | - | - | - | -- |
| RFP10P03L | Power dissipation 60 W Transistor polarity P Channel Current Id cont. 10 A Current Idm pulse 25 A Voltage Vgs th max. 2 V Pitch lead 2.54 mm Voltage Vds max 30 V Resistance Rds on 0.2 R | Fairchild-Semiconductor | - | - | - | - | 272 K |
| RFP14N05L | 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 119 K |
| RFP15N05L | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 354 K |
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