| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP250 | 200V standart power MOSFET | distributor | - | 3 | -55°C | 150°C | 47 K |
| IRFP250N | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A | International-Rectifier | - | 3 | -55°C | 175°C | 122 K |
| IRFP252 | N-channel power MOSFET, 200V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP253 | N-channel power MOSFET, 150V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP254 | HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.14 Ohm, ID = 23 A | International-Rectifier | - | 3 | -55°C | 150°C | 162 K |
| IRFP254 | 250V standart power MOSFET | distributor | - | 3 | -55°C | 150°C | 46 K |
| IRFP254N | HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 125 mOhm, ID = 23 A | International-Rectifier | - | 3 | -55°C | 175°C | 222 K |
| RFP25N05 | 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 104 K |
| RFP25N05L | 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 47 K |
| RFP25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 106 K |
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