Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRGPH30MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 86 K |
IRGPH40FD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 425 K |
IRGPH40MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 84 K |
IRGPH50FD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 431 K |
IRGPH50FD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 431 K |
IRGPH50MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 1 M |
RGP30A | 50 V, 3 A sintered glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 59 K |
RGP30A | 50 V, 3 A sintered glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 59 K |
RGP30B | 100 V, 3 A sintered glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 59 K |
RGP30B | 100 V, 3 A sintered glass passivated junction fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 59 K |
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