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RK7

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416RD8AC-RK70256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
KM416RD8AD-RK70256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
KM418RD8AC-RK70256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
KM418RD8AD-RK70256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
LLNRK70POWR-PRO dual-element, time-delay class RK1 fuse. 70 A. Voltage rating: 250 VAC 125 VDC. Interrupting rating: AC: 200,000 A rms symmetrical, 300,000 A rms symmetrical (littelfuse self-certified), DC: 20,000 A.distributor-2--189 K
LLSRK70POWR-PRO dual-element, time-delay class RK1 fuse. 70 A. Voltage rating: 600 VAC, 300 VDC. Interrupting rating: AC: 200,000 A rms symmetrical, 300,000 A rms symmetrical (littelfuse self-certified), DC: 20,000 A.distributor-2--189 K
RK7002N-channel MOSFET, interface and switching (60V/115mA)ROHMSST33--112 K
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