| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RM10 | 400 V, 1.2 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| RM100C1A-XXF | 100A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM100CA-XXF | 100A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 48 K |
| RM100HA-XXF | 100A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 150°C | 47 K |
| RM100SZ-6R | 100A - transistor module for medium power general use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
| RM100SZ-6S | 100A - transistor module for medium power general use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
| RM10A | 600 V, 1.2 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| RM10B | 800 V, 1.2 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| RM10TA-2H | 20A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 78 K |
| RM10Z | 200 V, 1.5 A, silicon rectifier diode | distributor | D2 | 2 | -65°C | 175°C | 39 K |
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