| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS10BR150 | 1.0 Gbps LVDS Buffer/Repeater | SGS-Thomson-Microelectronics | - | | - | - | 393 K |
| EHS10B1 | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 42 K |
| EHS10B1-S | Single Phase Bridge | Microsemi-Corporation | SEE_FACTORY | - | - | - | 42 K |
| IDT70T651S10BC | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T651S10BCI | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 10ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 344 K |
| IDT70T651S10BF | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T651S10BFI | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 10ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 344 K |
| JD54LS10B2A | Triple 3-Input NAND Gate | distributor | LCC | 20 | - | - | 120 K |
| S10B | 10.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 648 K |
| UDZS10B | Zener diode | ROHM | UMD2 | 2 | - | - | 55 K |
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