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S116

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
50S116T-5High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
50S116T-6High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
50S116T-7High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mAdistributorTSOP500°C70°C1 M
BAS116Low-leakage diodePhilips-SemiconductorsSOT23---52 K
BAS116Silicon low leakage diodeInfineon-formely-Siemens-3--98 K
BAS116LT1Switching DiodeON-Semiconductor-3--63 K
S116S01SIR type SSR for medium power controlSharpCompact package4-45°C65°C69 K
S116S02SIR type SSR for medium power controlSharpCompact package4-45°C65°C69 K
SN65LVDS116DGG 1:16 LVDS REPEATERTexas-InstrumentsDGG64--247 K
SN65LVDS116DGGR 1:16 LVDS REPEATERTexas-InstrumentsDGG64--247 K
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