| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 50S116T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 50S116T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| 50S116T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
| BAS116T | 85V; 215mW surface mount low leakage diode | distributor | - | 3 | -65°C | 150°C | 55 K |
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