Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IDT70T651S12DR | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
IDT70T651S12DRI | High-speed 2.5V 9Mbit (256K x 36) asynchronous dual-port static RAM with 3.3V or 2.5V interface, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | -40°C | 85°C | 344 K |
M2S12D20TP-10 | 512M double data rate SDRAM, 128M x 4 organization, 10ns, Vcc=2.3-2.7 | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D20TP-10L | 512M double data rate SDRAM, 128M x 4 organization, 10ns, Vcc=2.3-2.7, low power | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D20TP-75 | 512M double data rate SDRAM, 128M x 4 organization, 7.5ns, Vcc=2.3-2.7 | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D20TP-75L | 512M double data rate SDRAM, 128M x 4 organization, 7.5ns, Vcc=2.3-2.7, low power | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D30TP-75 | 512M double data rate SDRAM, 64M x 8 organization, 7.5ns, Vcc=2.3-2.7 | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
M2S12D30TP-75L | 512M double data rate SDRAM, 64M x 8 organization, 7.5ns, Vcc=2.3-2.7, low power | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP II | 66 | 0°C | 70°C | 754 K |
SDS60US12D | AC/DC U-bracket, max output power 63W. Output voltage 12.0 VDC. Output current 5.2 A. | distributor | - | - | 0°C | 70°C | 453 K |
SDS60US12D | AC/DC U-bracket, max output power 63W. Output voltage 12.0 VDC. Output current 5.2 A. | distributor | - | - | 0°C | 70°C | 453 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] |
---|