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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BS208240V; 200mA P-channel enchancement mode DMOS transistor. Specially suited for telephone subsetsdistributor-3-55°C150°C62 K
PS208Plastic silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 2.0 A.distributor-2-55°C150°C44 K
PS208RFast switching plastic rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 2.0 A.distributor-2-55°C150°C54 K
TS208R800 V, 2 A, fast switching plastic rectifierdistributor-2-55°C150°C163 K
VTS2081Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.distributorCase44C2-40°C125°C18 K
VTS2082Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.distributorCase 44A2-40°C125°C18 K
VTS2083Process photodiode. Isc = 0.64 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.distributorCase44C2-40°C125°C18 K
VTS2084Process photodiode. Isc = 0.33 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.distributorCase44C2-40°C125°C18 K
VTS2085Process photodiode. Isc = 0.16 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.distributorCase 44A2-40°C125°C18 K
VTS2086Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.distributorCase44B2-40°C125°C17 K
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