| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSS23A0D | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| FSS23A0R | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| FSS23A4R | 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| RN5VS23AA-TL | Low voltage detector. Detector threshold 2.3V. Output type Nch open drain. Taping type TL | distributor | - | 5 | -40°C | 85°C | 202 K |
| RN5VS23AA-TR | Low voltage detector. Detector threshold 2.3V. Output type Nch open drain. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 202 K |
| RN5VS23AC | Low voltage detector. Detector threshold 2.3V. Output type Nch open drain. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 202 K |
| SS23A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
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