| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S2N120BNDS | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 87 K |
| HGT1S2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGT1S2N120CN | 13A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 123 K |
| HGT1S2N120CNDS | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 92 K |
| S2N1 | 200 V, 1 A SCR | distributor | Compak | 3 | -40°C | 125°C | 2 M |
| SSS2N60B | 600V, 2A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 856 K |
| STS2NF100 | N-CHANNEL 100V - 0.23 OHM - 6A SO-8 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 284 K |
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