| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAS40DW-04 | 100V; 300mA surface mount schottky barrier diode array. PN junction guard ring for transient and ESD protection | distributor | - | 6 | -55°C | 125°C | 47 K |
| BAS40DW-05 | 100V; 300mA surface mount schottky barrier diode array. PN junction guard ring for transient and ESD protection | distributor | - | 6 | -55°C | 125°C | 47 K |
| BAS40DW-06 | 100V; 300mA surface mount schottky barrier diode array. PN junction guard ring for transient and ESD protection | distributor | - | 6 | -55°C | 125°C | 47 K |
| M2V64S40DTP-6 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
| M2V64S40DTP-6L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
| M2V64S40DTP-7 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
| M2V64S40DTP-7L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
| M2V64S40DTP-8 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
| M2V64S40DTP-8L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
| MAX6314US40D4-T | 68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.00V. Reset timeout period(min) 1120ms. | Maxim-Integrated-Producs | SOT143 | 4 | -40°C | 85°C | 114 K |
| [1] [2] 3 [4] [5] |
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