| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LT1S51A | Chip LED device | Sharp | DIP | 4 | -25°C | 85°C | 101 K |
| MG15Q6ES51A | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 260 K |
| MG25Q6ES51A | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 263 K |
| RN5VS51AA-TL | Low voltage detector. Detector threshold 5.1V. Output type Nch open drain. Taping type TL | distributor | - | 5 | -40°C | 85°C | 202 K |
| RN5VS51AA-TR | Low voltage detector. Detector threshold 5.1V. Output type Nch open drain. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 202 K |
| RN5VS51AC | Low voltage detector. Detector threshold 5.1V. Output type Nch open drain. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 202 K |
| RN5VS51AC | Low voltage detector. Detector threshold 5.1V. Output type Nch open drain. Antistatic bag for samples | distributor | - | 5 | -40°C | 85°C | 202 K |
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