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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH32S72DBFA-72,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C941 K
MH32S72DBFA-82,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C941 K
MH32S72PHB-102,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C595 K
MH32S72PHB-72,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C595 K
MH32S72PHB-82,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C595 K
MH32S72QJA-72,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C955 K
MH32S72QJA-82,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C955 K
MH32S72VJA-62,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C935 K
MH4S72BLG-7301989888-bit (4194304-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1680°C70°C587 K
MH4S72BLG-8301989888-bit (4194304-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1680°C70°C587 K
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