| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16S72BAMD-10 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
| MH16S72BAMD-7 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
| MH16S72BAMD-8 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
| MH16S72BCFA-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 935 K |
| MH16S72BCFA-7 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 958 K |
| MH16S72BCFA-8 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 958 K |
| MH32S72BBFA-8 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 964 K |
| MH4S72BLG-10 | 301989888-bit (4194304-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 587 K |
| MH4S72BLG-7 | 301989888-bit (4194304-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 587 K |
| MH4S72BLG-8 | 301989888-bit (4194304-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 587 K |
| 1 [2] [3] [4] [5] |
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