| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A62S8308M-55S | 55ns; 40mA 256K x 8bit low voltage CMOS SRAM | distributor | TSOP | 36 | 0°C | 70°C | 278 K |
| A62S8308M-55SI | 55ns; 40mA 256K x 8bit low voltage CMOS SRAM | distributor | TSOP | 36 | -40°C | 85°C | 278 K |
| A62S8308M-70S | 70ns; 40mA 256K x 8bit low voltage CMOS SRAM | distributor | TSOP | 36 | 0°C | 70°C | 278 K |
| A62S8308M-70SI | 70ns; 40mA 256K x 8bit low voltage CMOS SRAM | distributor | TSOP | 36 | -40°C | 85°C | 278 K |
| A62S8308V-55SI | 55ns; 40mA 256K x 8bit low voltage CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 278 K |
| A62S8308V-70SI | 70ns; 40mA 256K x 8bit low voltage CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 278 K |
| ADS830E | SpeedPlus 8-Bit, 60MHz Sampling Analog-to-Digital Converter | Burr-Brown-Corporation | 20 | - | - | - | 177 K |
| ADS830E/2K5 | SpeedPlus 8-Bit, 60MHz Sampling Analog-to-Digital Converter | Burr-Brown-Corporation | 20 | - | - | - | 177 K |
| LS830 | Ultra low leakage low drift monolithic dual N-channel JFET | Linear-Integrated-System-Inc-Linear-Systems | - | 6 | -65°C | 150°C | 26 K |
| MS830 | Schottky Rectifier | Microsemi-Corporation | - | - | - | - | 91 K |
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