| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A62S8316-70S | 70ns; 50mA 256K x 16bit low voltage CMOS SRAM | distributor | TSOP | 44 | 0°C | 70°C | 142 K |
| A62S8316-70SI | 70ns; 50mA 256K x 16bit low voltage CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 142 K |
| A62S8316-70SI | 70ns; 50mA 256K x 16bit low voltage CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 142 K |
| A62S8316V-70S | 70ns; 50mA 256K x 16bit low voltage CMOS SRAM | distributor | TSOP | 44 | 0°C | 70°C | 142 K |
| A62S8316V-70SI | 70ns; 50mA 256K x 16bit low voltage CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 142 K |
| ADS831E/2K5 | SpeedPlus 8-Bit, 80MHz Sampling Analog-to-Digital Converter | Burr-Brown-Corporation | 20 | - | - | - | 179 K |
| CS8312YD8 | IGBT ignition Predriver with dynamic current regulation | Cherry-Semiconductor | 8L SO Narrow | 8 | -40°C | 150°C | 139 K |
| CS8312YDR8 | IGBT ignition Predriver with dynamic current regulation | Cherry-Semiconductor | 8L SO Narrow | 8 | -40°C | 150°C | 139 K |
| CS8312YN8 | IGBT ignition Predriver with dynamic current regulation | Cherry-Semiconductor | 8L PDIP | 8 | -40°C | 150°C | 139 K |
| LS831 | Ultra low leakage low drift monolithic dual N-channel JFET | Linear-Integrated-System-Inc-Linear-Systems | - | 6 | -65°C | 150°C | 26 K |
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