| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1203 | Silicon PNP transistor for audio frequency amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 156 K |
| 2SA1204 | Silicon PNP transistor for audio frequency amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 153 K |
| 2SA1207 | PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 108 K |
| 2SA1208 | PNP epitaxial planar silicon transistor, high-voltage switching, audio 80W output predriver application | SANYO-Electric-Co--Ltd- | 2006A | 3 | - | - | 107 K |
| 2SA1213 | Silicon PNP transistor for power switching and power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 203 K |
| 2SA1252 | PNP epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 106 K |
| 2SA1253 | PNP epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 110 K |
| 2SA1256 | PNP epitaxial planar silicon transistor, high-frequency amp application | SANYO-Electric-Co--Ltd- | 1218B | 3 | - | - | 122 K |
| 2SA1257 | PNP epitaxial planar silicon transistor, high-voltage, AF power amp, 100W output predriver application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 103 K |
| SA12B5 | SCHOTTKY ARRAYS - (ASD) | SGS-Thomson-Microelectronics | - | - | - | - | 58 K |
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