| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD633 | 6Ampere darlington NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 127 K |
| 2SD634 | 6Ampere darlington NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 127 K |
| 2SD635 | 6Ampere darlington NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 127 K |
| GSD63034 | 3000 V fast recovery stud diode | distributor | - | - | - | - | 76 K |
| SD630CS | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 6.0 A. | distributor | - | 4 | -55°C | 125°C | 34 K |
| SD630CS-T3 | Reverse voltage: 30.00V; 6.0A DPAK surface mount schottky barrier rectifier | distributor | DPAK | 3 | -50°C | 125°C | 45 K |
| SD630CS-T3 | Reverse voltage: 30.00V; 6.0A DPAK surface mount schottky barrier rectifier | distributor | DPAK | 3 | -50°C | 125°C | 45 K |
| SD630CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 6.0 A. | distributor | - | 4 | -55°C | 125°C | 41 K |
| USD635 | Schottky Rectifier | Microsemi-Corporation | - | - | - | - | 87 K |
| USD635C | Schottky Rectifier | Microsemi-Corporation | - | - | - | - | 88 K |
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