Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
2SD880Y | NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. | distributor | - | 3 | -55°C | 150°C | 47 K |
HSD880 | Emitter to base voltage:7V 3A NPN epitaxial planar transistor for low frequency power amplifier applications | distributor | TO220AB | 3 | - | - | 34 K |
KSD880 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 59 K |
SD880T | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 75degC 8.0 A. | distributor | - | 4 | -55°C | 125°C | 43 K |
SD880YT | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A. | distributor | - | 4 | -55°C | 125°C | 38 K |
SD880YT | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A. | distributor | - | 4 | -55°C | 125°C | 38 K |
[1] 2 |
---|