| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGSF1N02ELT3 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 116 K |
| MMSF10N02ZR2 | TMOS single N-channel | Motorola | - | 8 | -55°C | 150°C | 184 K |
| MMSF10N02ZR2 | TMOS single N-channel | Motorola | - | 8 | -55°C | 150°C | 184 K |
| MMSF10N03ZR2 | TMOS single N-channel | Motorola | - | 8 | -55°C | 150°C | 196 K |
| SF10SC3L | Dual Schottky barrier rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 549 K |
| SF10SC4 | Dual Schottky barrier rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 617 K |
| SF10SC4R | Dual Schottky barrier rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 553 K |
| SF10SC6 | Dual Schottky barrier rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 554 K |
| SF10SC9 | Dual Schottky barrier rectifier | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 531 K |
| TVSF1206 | Transient Voltage Suppressor | Microsemi-Corporation | 1206 | - | - | - | 291 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
|---|
