| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSF250D | 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| FSF250R | 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| FSF250R | 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| FSF254D | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| FSF254R | 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| IS61SF25616-10B | 256K x 16 synchronous flow-through static RAM | distributor | PBGA | 119 | 0°C | 70°C | 108 K |
| IS61SF25616-8.5B | 256K x 16 synchronous flow-through static RAM | distributor | PBGA | 119 | 0°C | 70°C | 108 K |
| IS61SF25616-8B | 256K x 16 synchronous flow-through static RAM | distributor | PBGA | 119 | 0°C | 70°C | 108 K |
| IS61SF25618-8.5B | 256K x 18 synchronous flow-through static RAM | distributor | PBGA | 119 | 0°C | 70°C | 108 K |
| IS61SF25618-8B | 256K x 18 synchronous flow-through static RAM | distributor | PBGA | 119 | 0°C | 70°C | 108 K |
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