| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HSH2000NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 44 K |
| HSH2001CIEO | Lamp for photolithography. Power 2000 watts, current 77 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| HSH2001NIELO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 41 K |
| HSH2001NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 51 K |
| HSH2002NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 43 K |
| HSH2011NIEO | Lamp for photolithography. Power 2000 watts, current 80 amps(DC), voltage 25 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| IXSH24N60AU1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 37 K |
| IXSH24N60B | 600V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 88 K |
| IXSH25N120A | 1200V IGBT | distributor | - | 3 | -55°C | 150°C | 32 K |
| IXSH25N120AU1 | 1200V fast recovery epitaxial diode (FRED) | distributor | - | 3 | -55°C | 150°C | 36 K |
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