Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AT24C1024BN-SH25-B
| Serial EEPROM 1M (131,072 x 8) with Two Device Address Inputs | ATMEL-Corporation | - | | - | - | 1 M |
AT24C1024BN-SH25-T
| Serial EEPROM 1M (131,072 x 8) with Two Device Address Inputs | ATMEL-Corporation | - | | - | - | 1 M |
BSH201 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 150 K |
BSH202 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 138 K |
BSH203 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 149 K |
BSH205 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 143 K |
BSH206 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT363 | 6 | -55°C | 150°C | 144 K |
BSH207 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT457 | 6 | -55°C | 150°C | 155 K |
BSH299 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT363 | 6 | -55°C | 150°C | 93 K |
BSH299 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT363 | 6 | -55°C | 150°C | 93 K |
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