| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRG4PSH71KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A | International-Rectifier | - | 3 | -55°C | 150°C | 200 K |
| SH702 | 90 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| SH703 | 130 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 37 K |
| SSH70N10A | Advanced Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 262 K |
| SSH7N60B | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 650 K |
| TSH70 | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
| TSH70CD | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
| TSH70CDT | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
| TSH70CLT | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
| TSH70CLT | WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER | SGS-Thomson-Microelectronics | - | - | - | - | 1 M |
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