Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK3109-Z | MOS FET | NEC-Electronics-Inc- | - | - | - | - | 77 K |
2SK3109-ZJ | MOS FET | NEC-Electronics-Inc- | - | - | - | - | 77 K |
2SK3110 | MOS FET | NEC-Electronics-Inc- | - | - | - | - | 67 K |
2SK3111 | MOS FET | NEC-Electronics-Inc- | - | - | - | - | 75 K |
2SK3111-S | MOS FET | NEC-Electronics-Inc- | - | - | - | - | 75 K |
2SK3111-Z | MOS FET | NEC-Electronics-Inc- | - | - | - | - | 75 K |
2SK3124 | Silicon N-Channel Power F-MOS FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 22 K |
2SK3176 | Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, switching regulator, DC-DC converter & motor drive applications | Toshiba | - | 3 | - | - | 139 K |
SK310-T1 | Reverse voltage: 100.00V; 3.0A surface mount schottky barrier rectifier | distributor | SMC | 2 | -65°C | 125°C | 43 K |
SK310-T1 | Reverse voltage: 100.00V; 3.0A surface mount schottky barrier rectifier | distributor | SMC | 2 | -65°C | 125°C | 43 K |
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