| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| SMBJ10 | 10.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 582 K |
| SMBJ100 | 100.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 582 K |
| SMBJ100A | 100.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 582 K |
| SMBJ10A | 10.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 150°C | 582 K |
| TSMBJ1006C | Bi-directional 100Amp, 60V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1006C | Bi-directional 100Amp, 60V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1007C | Bi-directional 100Amp, 70V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1010C | Bi-directional 100Amp, 100V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1012C | Bi-directional 100Amp, 120V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1024C | Bi-directional 100Amp, 240V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
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