Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CXK58257ASP-10L | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 2.5uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
CXK58257ASP-10LL | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 1uW | Sony-Semiconductor | DIP | 28 | 0°C | 70°C | 291 K |
HM6264ALSP-10 | 8192-word x 8-bit high speed CMOS static RAM, 100ns | distributor | PDIP | 28 | 0°C | 70°C | 54 K |
HM6264ALSP-10L | 8192-word x 8-bit high speed CMOS static RAM, 100ns | distributor | PDIP | 28 | 0°C | 70°C | 54 K |
HM6264ASP-10 | 8192-word x 8-bit high speed CMOS static RAM, 100ns | distributor | PDIP | 28 | 0°C | 70°C | 54 K |
HM6264BLSP-10L | 64k SRAM (8-kword x 8-bit), 100ns access time | distributor | plastic DIP | 28 | 0°C | 70°C | 82 K |
LC371100SP-10LV | 1MEG (131072words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | DIP32 | 32 | 0°C | 70°C | 80 K |
MACH211SP-10JI | High-performance EE CMOS programmable logic, 64 macrocells, 32 I/Os, in-system programmable, 10ns | Lattice-Semiconductor-Corporation | PLCC | 44 | -40°C | 85°C | 1 M |
MACH211SP-10VC | High-performance EE CMOS programmable logic, 64 macrocells, 32 I/Os, in-system programmable, 10ns | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 1 M |
MACH221SP-10YI | High-performance EE CMOS programmable logic, 96 macrocells, 48 I/Os, in-system programmable, 10ns | Lattice-Semiconductor-Corporation | PQFP | 100 | -40°C | 85°C | 1 M |
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