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SP-10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CXK58257ASP-10L32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 2.5uWSony-SemiconductorDIP280°C70°C291 K
CXK58257ASP-10LL32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 1uWSony-SemiconductorDIP280°C70°C291 K
HM6264ALSP-108192-word x 8-bit high speed CMOS static RAM, 100nsdistributorPDIP280°C70°C54 K
HM6264ALSP-10L8192-word x 8-bit high speed CMOS static RAM, 100nsdistributorPDIP280°C70°C54 K
HM6264ASP-108192-word x 8-bit high speed CMOS static RAM, 100nsdistributorPDIP280°C70°C54 K
HM6264BLSP-10L64k SRAM (8-kword x 8-bit), 100ns access timedistributorplastic DIP280°C70°C82 K
LC371100SP-10LV1MEG (131072words x 8bit) mask ROM internal clocked silicon gateSANYO-Electric-Co--Ltd-DIP32320°C70°C80 K
MACH211SP-10JIHigh-performance EE CMOS programmable logic, 64 macrocells, 32 I/Os, in-system programmable, 10nsLattice-Semiconductor-CorporationPLCC44-40°C85°C1 M
MACH211SP-10VCHigh-performance EE CMOS programmable logic, 64 macrocells, 32 I/Os, in-system programmable, 10nsLattice-Semiconductor-CorporationTQFP440°C70°C1 M
MACH221SP-10YIHigh-performance EE CMOS programmable logic, 96 macrocells, 48 I/Os, in-system programmable, 10nsLattice-Semiconductor-CorporationPQFP100-40°C85°C1 M
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