| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSPL230F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 81 K |
| FSPL230R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 81 K |
| SPL2F81 | Laser diode with FC-connector | Infineon-formely-Siemens | - | 3 | -10°C | 60°C | 122 K |
| SPL2F85 | Laser diode with FC-connector | Infineon-formely-Siemens | - | 3 | -10°C | 60°C | 122 K |
| SPL2F94 | Laser diode with FC-connector | Infineon-formely-Siemens | - | 3 | -10°C | 60°C | 122 K |
| SPL2Y81 | Laser diode | Infineon-formely-Siemens | - | 3 | -10°C | 60°C | 115 K |
| SPL2Y85 | Laser diode | Infineon-formely-Siemens | - | 3 | -10°C | 60°C | 115 K |
| SPL2Y94 | Laser diode | Infineon-formely-Siemens | - | 3 | -10°C | 60°C | 115 K |
| TISPL758LF3 DR | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | DR | - | - | - | 178 K |
| TISPL758LF3D | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | D | - | - | - | 178 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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