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SS10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1SS106High frequency Schottky barrier diode for detection and mixerdistributor----26 K
BSS100 N-Channel Logic Level Enhancement Mode Field Effect TransistorFairchild-Semiconductor----284 K
BSS100N-channel SIPMOS small-signal transistorInfineon-formely-Siemens-3-55°C150°C79 K
BSS101N-channel SIPMOS small-signal transistorInfineon-formely-Siemens-3-55°C150°C79 K
HSS104High frequency small signal diodedistributorMHD---25 K
SS100-T1Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifierdistributorSMA2-65°C125°C42 K
SS100-T1Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifierdistributorSMA2-65°C125°C42 K
SS100-T3Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifierdistributorSMA2-65°C125°C42 K
SS100-T3Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifierdistributorSMA2-65°C125°C42 K
USS10Standard Rectifier (trr more than 500ns)Microsemi-CorporationDH---136 K
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