Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1SS106 | High frequency Schottky barrier diode for detection and mixer | distributor | - | - | - | - | 26 K |
BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 284 K |
BSS100 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 79 K |
BSS101 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 79 K |
HSS104 | High frequency small signal diode | distributor | MHD | - | - | - | 25 K |
SS100-T1 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS100-T1 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS100-T3 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS100-T3 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
USS10 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | DH | - | - | - | 136 K |
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