Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 284 K |
BSS100 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 79 K |
FSS100-008A | 80V dual power schottky diode | distributor | - | 3 | -55°C | 175°C | 30 K |
SS100 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 125°C | 171 K |
SS100 | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. | distributor | - | 2 | -50°C | 125°C | 66 K |
SS100 | 100 V, 1 A, surface mount schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 155 K |
SS100-T1 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS100-T1 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS100-T3 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
SS100-T3 | Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 42 K |
1 [2] |
---|