| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS123 | High speed switching silicon epitaxial double diodes | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 206 K |
| BSS123-7 | 100V; 170mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
| BSS123W | 100V; 170mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 67 K |
| MSS1207 | 2.4-6V 12 instant voice ROM | Mosel-Vitelic | DIP | 28 | - | - | 384 K |
| SS12 | 20 V, 1 A, schottky SMA diode | distributor | - | 2 | - | - | 68 K |
| SS12 | 1.0A, 20V ultra fast recovery rectifier | distributor | HSMA | - | - | - | 353 K |
| SS12 | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 1.0 A. | distributor | - | 2 | -50°C | 125°C | 66 K |
| SS12 | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 1.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
| SS12 | 20 V, 1.0 A surface mount schottky barrier rectifier | distributor | DO | 2 | -50°C | 125°C | 136 K |
| SS12 | 20 V, 1 A, surface mount schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 155 K |
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