| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSS123 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 57 K |
| FSS12 | 20 V, 1 A surface mounted schottky barrier rectifier | distributor | SMA | 2 | -65°C | 125°C | 43 K |
| SS12 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 125°C | 171 K |
| SS12 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 125°C | 171 K |
| SS12 | 20 V, 1 A, surface mount schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 155 K |
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