Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1SS133 | 90 V, switching diode | distributor | - | 2 | - | - | 82 K |
BSS138-7 | 50V; 200mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 125°C | 92 K |
BSS138DW | 50V; 200mA dual N-channel enchancement mode field effect transistor | distributor | - | 6 | -55°C | 150°C | 58 K |
BSS138W | 50V; 200mA N-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 90 K |
SS13 | 30 V, 1 A, schottky SMA diode | distributor | - | 2 | - | - | 68 K |
SS13 | 1.0A, 30V ultra fast recovery rectifier | distributor | HSMA | - | - | - | 353 K |
SS13 | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 1.0 A. | distributor | - | 2 | -50°C | 125°C | 66 K |
SS13 | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 1.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SS13 | 30 V, 1.0 A surface mount schottky barrier rectifier | distributor | DO | 2 | -50°C | 125°C | 136 K |
SS13 | 30 V, 1 A, surface mount schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 155 K |
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