| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSS229 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 303 K |
| FSS23A0D | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| FSS23A0R | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| SS22 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SS23 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SS24 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SS25 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SS26 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SS28 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SS29 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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